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Conduction, degradation and breakdown of thin oxide films for nano and microelectronic applications

Seminario in quattro giornate a cura del prof. Enrique Miranda dell’università Autonoma di Barcellona
05 dicembre 2016

Nell’ambito del programma "Visiting Professor", finanziato dalla Regione Autonoma della Sardegna, a partire dal 5 di dicembre il Dipartimento di Ingegneria Elettrica ed Elettronica dell’Università di Cagliari organizza un seminario tenuto dal Prof. Miranda dell’università Autonoma di Barcellona.


SEMINARIO
Conduction, degradation and breakdown of thin oxide films for nano and microelectronic applications
 
Prof. Enrique Miranda - Escola d’Enginyeria, Universitat Autònoma de Barcelona, Spain


Attività articolate in quattro lezioni, per un totale di 10 ore e 1 credito formativo al superamento di un test finale. Tutti gli interessati possono contattare la prof.ssa Giovanna Mura (
gmura@diee.unica.it) per ulteriori informazioni.


05 / 12 / 2016 Lecture 1
Conventional electron transport mechanisms in thin oxides: Schottky, Poole-Frenkel, Direct and Fowler-Nordheim tunneling, Ohmic, Space Charge Limited, Trap-assisted conduction
 
06 / 12 / 2016 Lecture 2
Oxide degradation (charge trapping, Stress Induced Leakage Current, NBTI) and breakdown. Fundamentals of oxide reliability analysis (Time-to-breakdown, Poisson and Weibull distributions). Post-breakdown conduction mechanisms (VRH, Coulomb blockade, Non-linear resistance networks, Quantum point contact, etc.)

07 / 12 / 2016 Lecture 3
Localization of failure events in capacitors and transistors (AFM, SEM, EBIC, IR, SCM, electrical methods). Analysis of multiple failure events using spatial statistics. Introduction to the Spatstat package for the R language
 
12 / 12 /2016 Lecture 4
Reversible dielectric breakdown: resistive switching effect. Memristors and memristive systems. Filamentary and hysteretic conduction models. Simulation of memristors in SPICE

Enrique Miranda
Prof. Enrique Miranda - Escola d’Enginyeria, Universitat Autònoma de Barcelona, Spain
 

Biography

Enrique Miranda is Professor at the Universitat Autònoma de Barcelona (UAB), Spain. He has a PhD in Electronics Engineering from the UAB (1999) and a PhD in Physics from the Universidad de Buenos Aires, Argentina (2001). Dr. Miranda received numerous scholarships and awards including: INTERCAMPUS (Universidad de Zaragoza, Spain), MUTIS (UAB), RAMON y CAJAL (UAB), German Exchange Academic Agency (Technical University Hamburg-Harburg), Italian government (Universita degli Studi di Padova), MATSUMAE (Tokyo Institute of Technology, Japan), TAN CHIN TUAN (Nanyang Technological University, Singapore), WALTON award from Science Foundation Ireland (Tyndall National Institute), Distinguished Visitor Award from Royal Academy of Engineering (University College London), Slovak Academy of Sciences, CÉSAR MILSTEIN (CNEA, Argentina). Dr. Miranda serves as member of the Distinguished Lecturer program of the Electron Devices Society (EDS-IEEE) since 2001 and as Editorial Advisor of the journal Microelectronics Reliability since 2003. He forms or has formed part of INFOS, IRPS, ESREF, MIEL, E-MRS, ESSDERC, and IPFA Technical or Steering Committees. Dr. Miranda was visiting scientist at the Universita di Napoli, Indian Institute of Technology, CNEA-Argentina (supported by the Abdus Salam International Centre for Theoretical Physics), Innovation for High Performance Microelectronics (IHP-Germany), Universita di Modena, Soochow University-China, UCL (supported by The Leverhulme Trust, UK), etc. He has authored and co-authored around 200 peer-review journal papers and conference proceedings most of them devoted to the electron transport problem in thin dielectric films: tunneling, degradation, post-breakdown conduction, resistive switching and memristors.
 

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