Ionic-Liquid Gating of InAs Nanowire-Based Field-Effect Transistors

Lieb, Johanna;Demontis, Valeria;Prete, Domenic;Ercolani, Daniele;Zannier, Valentina;Sorba, Lucia;Ono, Shimpei;Beltram, Fabio;Sacépé, Benjamin;Rossella, Francesco

2019-01-01

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Abstract

Here, the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid is reported. Liquid gating yields very efficient carrier modulation with a transconductance value 30 times larger than standard back gating with the SiO2/Si++ substrate. Thanks to this wide modulation, the controlled evolution from semiconductor to metallic-like behavior in the nanowire is shown. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III–V semiconductor nanowires: this architecture opens the way to a wide range of fundamental and applied studies from the phase transitions to bioelectronics.