ESD tests on 850 nm GaAs-based VCSELs

VANZI, MASSIMO;MURA, GIOVANNA;MARCELLO, GIULIA;
2016-01-01

Abstract

Forward and reverse HBM, MM, CDM ESD tests have been performed on 850-nm VCSELs, together with EOS and overpower test. The physical analysis of the tested devices showed a variety of damages not easily correlated to the measured electro-optical degradations. The solution requires the detailed interpretation of the observed physical mechanism, by means of electron microscopy and device modelling.
2016
Inglese
MICROELECTRONICS RELIABILITY
64
617
622
6
WOS:000386401600118
2-s2.0-84991666716
Esperti anonimi
internazionale
scientifica
ESD; Failure analysis; VCSEL; Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics; Condensed Matter Physics; Safety, Risk, Reliability and Quality; Surfaces, Coatings and Films; Electrical and Electronic Engineering
sì
Vanzi, Massimo; Mura, Giovanna; Marcello, Giulia; Xiao, K.
1.1 Articolo in rivista
info:eu-repo/semantics/article
1 Contributo su Rivista::1.1 Articolo in rivista
262
4
reserved
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