Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT submitted to accelerated life tests

MARTINES, GIOVANNI;
1998-01-01
1998
Inglese
MICROELECTRONICS RELIABILITY
38
1227
1232
6
G., Menghesso; G., Crosato; C., Garat; Martines, Giovanni; G., Paccagnella; E., Zanoni
1.1 Articolo in rivista
info:eu-repo/semantics/article
1 Contributo su Rivista::1.1 Articolo in rivista
262
6
none
Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Questionnaire and social

Share on:
Impostazioni cookie