Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT’s submitted to accelerated life tests

MARTINES, GIOVANNI;
1998-01-01

1998
Inglese
Proceedings 9th European Symposium on Reliability of Electron Devices
1227
1232
6
ESREF 98
5-9 october 1998
Copenhagen, Denmark
internazionale
4 Contributo in Atti di Convegno (Proceeding)::4.1 Contributo in Atti di convegno
Meneghesso, G; Crosato, C; Garat, F; Martines, Giovanni; Paccagnella, A; Zanoni, E.
273
6
4.1 Contributo in Atti di convegno
none
info:eu-repo/semantics/conferenceObject
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