DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime

MARTINES, GIOVANNI;
1998-01-01
1998
Inglese
Proceedings of European Gallium Arsenide Conference, Gallium Arsenide Application Symposium
539
544
6
GAAS 98
5-6 october 1998
Amsterdam
internazionale
4 Contributo in Atti di Convegno (Proceeding)::4.1 Contributo in Atti di convegno
Meneghesso, G; Paccagnella, A; Martines, Giovanni; Garat, F; Crosato, C; Zanoni, E.
273
6
4.1 Contributo in Atti di convegno
none
info:eu-repo/semantics/conferenceObject
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