Voltage transitory effects and the effectiveness of the Er doping of porous silicon

MULA, GUIDO;Loddo L;MASCIA, MICHELE;PALMAS, SIMONETTA;Ruffilli R;FALQUI, ANDREA

2014-01-01

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Abstract

A thorough understanding of Er-doping of porous silicon (PSi) is mandatory to improve the efficiency of PSi:Er-based devices for light emission. In this work, the voltage transient at the first stages of constant current Er doping is studied as a function of the current intensity. Two very different transient shapes are evidenced, and a correlation with electrochemical impedance spectroscopy, optical reflectivity and chemical analysis, together with an interpretative model, is proposed.