Voltage transitory effects and the effectiveness of the Er doping of porous silicon

MULA, GUIDO;MASCIA, MICHELE;PALMAS, SIMONETTA;FALQUI, ANDREA
2014-01-01

Abstract

A thorough understanding of Er-doping of porous silicon (PSi) is mandatory to improve the efficiency of PSi:Er-based devices for light emission. In this work, the voltage transient at the first stages of constant current Er doping is studied as a function of the current intensity. Two very different transient shapes are evidenced, and a correlation with electrochemical impedance spectroscopy, optical reflectivity and chemical analysis, together with an interpretative model, is proposed.
2014
Inglese
Porous Semiconductors - Science and technology - Materials of the 9th International Conference
Andres Cantarero
162
163
2
http://www.the-psst.com/index.php?conference=psst&schedConf=2014&page=paper&op=viewPaper&path[]=103
PSST 2014, Porous Semiconductors - Science and Technology Conference
contributo
Esperti anonimi
9-14 March
Benidorm, Spain
internazionale
porous silicon; erbium doping
no
4 Contributo in Atti di Convegno (Proceeding)::4.1 Contributo in Atti di convegno
Mula, Guido; Loddo, L; Mascia, Michele; Palmas, Simonetta; Ruffilli, R; Falqui, Andrea
273
6
4.1 Contributo in Atti di convegno
none
info:eu-repo/semantics/conferencePaper
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