III-V semicondutor nanostructures and iontronics: InAs nanowire-based electric double layer field effect transistors

Prete D.;Lieb J.;Demontis V.;Bellucci L.;Tozzini V.;Ercolani D.;Zannier V.;Sorba L.;Ono S.;Beltram F.;Sacepe B.;Rossella F.

2019-01-01

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Abstract

In the emerging interdisciplinary field of iontronics, ionic motion and arrangement in electrolyte media are exploited to control the properties and functionalities of electronic devices. This approach encompasses a wide range of applications across engineering and physical sciences including solid-state physics, electronics and energy storage. We briefly discuss the use of approaches and techniques characteristic of iontronics in nanoscale devices based on III-V semiconductor nanostructures, a versatile and promising platform for nanoscience and nanotechnology applications. Then, we report and discuss the operation of InAs nanowire-based electrolyte-gated transistors implemented using ionic liquids. We show that the ionic liquid gating outperforms the conventional solid-state back gate, and we compare the current modulation achieved in the same InAs NW using the ionic liquid gate or the back-gate. Finally, we highlight the capability of the liquid electrolyte to drastically change the resistance dependence on temperature in the nanowire. Our results suggest promising strategies toward the advanced field effect control of innovative III-V semiconductor nanowire-based devices for information and communication technologies at large.