Heterogeneously integrated indium gallium nitride on silicon photonic integrated circuits

Pintus P;
2018-01-01
2018
Inglese
U.S. provisional patent no. 62/756220
Uni. of California Santa Barbara
sì
6 Brevetti::6.1 Brevetto
6
285
info:eu-repo/semantics/patent
none
Kamei, T; Bowers, J E; Kamikawa, T; Pintus, P; Denbaars, S P; Nakamura, S
6.1 Brevetto
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