Dead-Time Analysis of a Universal SiC-GaN-Based DC-DC Converter for Plug-In Electric Vehicles

Moradpour Milad
First
;
Serpi Alessandro;Gatto Gianluca
Last
2018-01-01

Abstract

A new universal full-directional SiC-GaN-based two-phase DC-DC converter has been recently introduced. It is supposed to replace with DC-DC battery charger and DC-DC traction drive converters in Plug-In Electric Vehicles. The SiC-GaN-based converter is designed to have the advantage of low switching power loss of GaN in hard-switching application and also avoid a high number of paralleled phases for high power multi-phase DC-DC converter applications. Especially in this paper, a dead-time analysis is done for the state-of-the-art high power GaN and SiC components of the proposed converter. To this aim, a new Spice-based simulation method is presented to obtain precise dead-time power loss calculations. Furthermore, the effect of negative OFF gate-source voltage is investigated.
2018
Inglese
Proc. 44th Annual Conference of the IEEE Industrial Electronics Society (IECON 2018)
978-1-5090-6683-4
1134
1139
6
44th Annual Conference of the IEEE Industrial Electronics Society (IECON 2018)
Contributo
Esperti anonimi
Oct. 21-23, 2018
Washington D.C. (USA)
internazionale
scientifica
Dead-time; Gallium Nitride; Silicon Carbide; DCDC converter; Plug-in electric vehicles
no
4 Contributo in Atti di Convegno (Proceeding)::4.1 Contributo in Atti di convegno
Moradpour, Milad; Serpi, Alessandro; Gatto, Gianluca
273
3
4.1 Contributo in Atti di convegno
reserved
info:eu-repo/semantics/conferencePaper
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