4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography

TIDDIA, MARIAVITALIA;MULA, GUIDO;SECHI, ELISA;VACCA, ANNALISA;
2016-01-01

Abstract

In this work, we report a method to process porous silicon to improve its chemical resistance to alkaline solution attacks based on the functionalization of the pore surface by the electrochemical reduction of 4-nitrobenzendiazonium salt. This method provides porous silicon with strong resistance to the etching solutions used in optical lithography and allows the fabrication of tailored metallic contacts on its surface. The samples were studied by chemical, electrochemical, and morphological methods. We demonstrate that the grafted samples show a resistance to harsh alkaline solution more than three orders of magnitude larger than that of pristine porous silicon, being mostly unmodified after about 40 min. The samples maintained open pores after the grafting, making them suitable for further treatments like filling by polymers. Optical lithography was performed on the functionalized samples, and electrochemical characterization results are shown.
2016
Inglese
11
1
436
10
http://www.springer.com/materials/nanotechnology/journal/11671
Esperti anonimi
internazionale
scientifica
4-Nitrobenzenediazonium grafting; Improved chemical resistance; Optical lithography; Porous silicon; Materials Science (all); Condensed Matter Physics
no
Tiddia, Mariavitalia; Mula, Guido; Sechi, Elisa; Vacca, Annalisa; Cara, Eleonora; De Leo, Natascia; Fretto, Matteo; Boarino, Luca
1.1 Articolo in rivista
info:eu-repo/semantics/article
1 Contributo su Rivista::1.1 Articolo in rivista
262
8
open
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