Anomalous energetics and defect-assisted diffusion of Ga in silicon
MELIS, CLAUDIO;LOPEZ, GIORGIA MARIA;FIORENTINI, VINCENZO
2004-01-01
Abstract
We study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast to B and In, the favored Ga/self-interstitial complex is the tetrahedral interstitial Ga-T. Thus in the presence of self-interstitials Ga becomes interstitial, and is electrically deactivated as an acceptor. Studying the native-defect assisted diffusion, we find a self-interstitial-assisted mechanism to be favored; vacancy-assisted diffusion has a sizably larger activation energy, in agreement with the observed transient enhanced diffusion behavior. (C) 2004 American Institute of Physics.Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.