Photo-electrochemical formation of porous GaP

RICCI, PIER CARLO;ANEDDA, ALBERTO;CARBONARO, CARLO MARIA;CHIRIU, DANIELE;CORPINO, RICCARDO
2005-01-01

Abstract

Electrochemical etching formation mechanisms of porous gallium phosphide are investigated under different conditions. Anodic etching of single crystalline n-type GaP was performed in H2SO4 0.5 M aqueous solution both under dark condition and by shining the samples with the 351 nm line of an Argon laser. Different reaction mechanisms are found as evidenced by the analysis of the current-voltage characteristics. Moreover, a dependence of the porosity on the laser power density is detected. A quantitative estimate of the porosity is given by studying the Fröhlich modes through micro Raman Spectroscopy.
2005
Inglese
PHYSICA STATUS SOLIDI C
2
9
3365
3369
5
WOS:000230785100037
2-s2.0-27344432650
Esperti anonimi
internazionale
scientifica
no
Ricci, PIER CARLO; Anedda, Alberto; Carbonaro, CARLO MARIA; Chiriu, Daniele; F., Clemente; Corpino, Riccardo
1.1 Articolo in rivista
info:eu-repo/semantics/article
1 Contributo su Rivista::1.1 Articolo in rivista
262
6
reserved
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